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DSF01S30SC

Toshiba Semiconductor
Part Number DSF01S30SC
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Type Diode
Published Jul 22, 2015
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF01S30SC DSF01S30SC High-Speed Switching Application Unit: mm...
Datasheet PDF File DSF01S30SC PDF File

DSF01S30SC
DSF01S30SC

Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF01S30SC DSF01S30SC High-Speed Switching Application Unit: mm 0.
1 9±0.
02 Abusolute Maximum Ratings (Ta = 25°C) ２ 0.
025±0.
015 0.
62 ±0.
03 0.
3 8 Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 100* 2 125 −55 to 125 *: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
V mA A °C °C １ 0 .
32±0.
03 0.
3±0.
03 0.
19±0.
02 0.
27±0.
02 0.
025±0.
015 １： CATHODE ２： ANODE Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant ch...


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