NAND Flash Memory
Description
Micron Confidential and Proprietary
1Gb x8, x16: NAND Flash Memory Features
NAND Flash Memory
MT29F1G08ABAEAWP, MT29F1G08ABAEAH4, MT29F1G08ABBEAH4 MT29F1G16ABBEAH4, MT29F1G08ABBEAHC, MT29F1G16ABBEAHC
Features
• Open NAND Flash Interface (ONFI) 1.
0-compliant1 • Single-level cell (SLC) technology • Organization
– Page size x8: 2112 bytes (2048 + 64 bytes) – Page size x16: 1056 words (1024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 1Gb: 1024 blocks • Asynchronous I/O performance – tRC/tWC: 20ns (3.
3V), 25ns (1.
8V) • Array performance – Read page: 25µs – Program page: 200µs (TYP, 3.
3V and 1.
8V) – Erase block: 700µs (TYP) • Command set: ONFI NAND Flash Protocol • Advanced command set – Program page cache mode – Read page cache mode – One-time programmable (OTP) mode – Read unique ID – Internal data move – Block lock (1.
8V only) • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Internal data move operations supported within the device from which data is read
• Ready/busy# (R/B#) signal provides a hardware method for detecting operation completion
• WP# signal: write protect entire device • First block (block address 00h) is valid when shipped
from factory with ECC.
For minimum required ECC, see Error Management.
• Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000 • RESET (FFh) required as first command after power-on • Alternate method of device initialization (Nand_Init) after power up3 (contact factory) • Quality and reliability – Data retention: JESD47 compliant; see qualification
report – Endurance: 100,000 PROGRAM/ERASE cycles • Operating Voltage Range – VCC: 2.
7–3.
6V – VCC: 1.
7–1.
95V • Operating temperature: – Commercial (CT): –0ºC to +70ºC – Industrial (IT): –40ºC to +85ºC • Package – 48-pin TSOP Type 1, CPL2
Notes: 1.
The ONFI 1.
0 specification is available at www.
onfi.
org.
2.
CPL = Center parting line.
3.
Available only in the 1.
8V ...
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