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MT4S24U

Toshiba

Silicon NPN Epitaxial Planar Type Transistor - Toshiba


MT4S24U
MT4S24U

PDF File MT4S24U PDF File



Description
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S24U VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.
55dB(Typ.
) (@f = 2GHz) • High Gain: |S21e|2 = 11.
5dB(Typ.
) (@f = 2 GHz) MT4S24U Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC(Note.
1) Tj Tstg Rating 10 5 2 50 10 175 150 −55 to 150 Unit V V V mA mA mW °C °C USQ 1.
Emitter1(E1) 2.
Collector(C) 3.
Emitter2(E2) 4.
Base(B) JEDEC ― JEITA ― TOSHIBA 2-2K1A Weight: 6 mg (typ.
) Note.
1: The device is mounted on a FR4 board (20mm X 25mm X 1.
55 mm (t)) Note.
2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Marking 4 3 Type Name R8 12 1 2010-08-18 MT4S24U Microwave Characteristics (Ta = 25°C) Characteristic Transition frequency Insertion gain Noise figure Symbol fT |S21e|2 NF Condition VCE = 3 V, IC = 20 mA VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz Min Typ.
Max Unit 12.
5 9.
5 ⎯ 14.
5 11.
5 1.
55 ⎯ ⎯ 2.
35 GHz dB Electrical Characteristics (Ta = 25°C) Characteristic Symbol Condition Min Typ.
Max Unit Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance ICBO IEBO hFE Cre VCB = 6 V, IE = 0 ⎯ ⎯ 100 nA VEB = 1 V, IC = 0 ⎯ ⎯ 100 nA VCE = 3 V, IC = 20 mA...



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