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C5233

Toshiba
Part Number C5233
Manufacturer Toshiba
Description 2SC5233
Published Jun 11, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Switching and...
Datasheet PDF File C5233 PDF File

C5233
C5233


Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Switching and Muting Switch Application 2SC5233 Unit: mm • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.
) @IC = 10 mA/IB = 0.
5 mA • Large collector current: IC = 500 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation Junction temperature Storage temperature range PC 100 mW Tj 125 °C Tstg −55~125 °C JEDEC JEITA ― SC-70 Note: Using continuously under hea...



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