2SC5154
Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5154
Power Amplifier Applications Driver Stage Amplifier Applications
2SC5154
Unit: mm
• High transition frequency: fT = 100 MHz (typ.
)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
Rating
160 160
5 1.
5 3.
0 0.
15 1.
3 150 −50 to 150
Unit V V V
A
A W °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO IEBO
VCB = 160 V, IE = 0 VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (Note)
VCE = 5 V, IC = 100 mA
VCE (sat) VBE fT Cob
IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 500 mA VCE = 10 V, IC = 100 mA VCB = 10 V, IC = 0, f = 1 MHz
Note: hFE classification O: 70 to 140, Y: 120 to 240
Marking
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.
55 g (typ.
)
Min Typ.
Max Unit
― ― 1.
0 µA
― ― 1.
0 µA
160 ―
―
V
70 ― 240
― ― 1.
0 V
― 0.
75 0.
95
V
― 100 ― MHz
― 25 ― pF
C5154 Characteristics
indicator
Part No.
(or abbreviation code)
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1
2004-07-07
Collector current IC (A)
IC – VCE
1.
2 Common emitter
20 12
Ta = 25°C
1.
0
8
6 0.
8
0.
6 4
0.
4 IB = 2 mA
0.
2 0
0 0 2 4 6 8 10 12 14
Collector-emitter voltage VCE (V)
VCE (sat) – IC
1
Common emitter 0.
5 IC/IB = 10
0.
3
25
Ta = 100°C 0.
1
−25
0.
05
0.
02 0.
003
0.
01 0.
03 0.
1 0.
3 Collector current IC (A)
1
Transition frequency fT (MHz)
DC current gain hFE
2SC5154
hFE – IC
500
Common emitter
300
Ta = 100°C
VCE = 5 V
25
100 −25
50
30
10 0.
003
0.
01 0.
03
0.
1
0.
3
Collector current IC (A)
1
...
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