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C5122

Toshiba
Part Number C5122
Manufacturer Toshiba
Description 2SC5122
Published Jun 11, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • Hig...
Datasheet PDF File C5122 PDF File

C5122
C5122

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.
4 V (typ.
) (IC = 20 mA, IB = 0.
5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current DC Pulse IC 50 mA ICP 100 Base current IB 25 mA Collector power dissipation PC 900 mW JEDEC TO-92MOD Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-5J1A Note1: Using continuously under heavy loads (e.
...


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