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A1213

Toshiba
Part Number A1213
Manufacturer Toshiba
Description 2SA1213
Published Jun 11, 2015
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applica...
Datasheet PDF File A1213 PDF File

A1213
A1213

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm • Low saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.
0 μs (typ.
) • Small flat package • PC = 1.
0 to 2.
0 W (mounted on a ceramic substrate) • Complementary to 2SC2873 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg −50 −50 −5 −2 −0.
4 500 1000 150 −55 to 15...


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