2SC4690
Description
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC4690
Power Amplifier Applications
2SC4690
Unit: mm
• High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1805 • Suitable for use in 70-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 140 V
Collector-emitter voltage
VCEO 140 V
Emitter-base voltage
VEBO 5 V
Collector current
DC
IC
10 A
Pulse ICP 20
Base current
IB 1 A
Collector power dissipation (Tc = 25°C)
PC
80 W
JEDEC
JEITA
― ―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
TOSHIBA
2-16F1A
Weight: 5.
8 g (typ.
)
Note: Using continuously under heavy loads (e.
g.
the application of high
temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.
e.
operating
temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report
and estimated failure rate, etc).
1 2006-11-10
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 140 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1) (Note)
VCE = 5 V, IC = 1 A
hFE (2) VCE (sat)
VCE = 5 V, IC = 5 A IC = 7 A, IB = 0.
7 A
VBE VCE = 5 V, IC = 5 A
fT VCE = 5 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
2SC4690
Min Typ.
Max Unit
― ― 5.
0 μA
― ― 5.
0 μA
140 ―
―
...
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