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C4682

Toshiba
Part Number C4682
Manufacturer Toshiba
Description 2SC4682
Published Jun 10, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4682 Strobe Flash Applications Medium Power Amplifier App...
Datasheet PDF File C4682 PDF File

C4682
C4682

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4682 Strobe Flash Applications Medium Power Amplifier Applications 2SC4682 Unit: mm • Excellent hFE linearity: hFE (1) = 800 to 3200 (VCE = 1 V, IC = 0.
5 A) : hFE (2) = 500 (typ.
) (VCE = 1 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 3 A, IB = 30 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCES V (BR) CEO VEBO IC ICP IB PC Tj Tstg Rating 30 30 15 6 3 6 0.
8 900 150 −55 to 150 Unit V V V A A mW °...


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