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C4666

Toshiba
Part Number C4666
Manufacturer Toshiba
Description 2SC4666
Published Jun 10, 2015
Detailed Description 2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4666 Audio Frequency Amplifier Applications Swit...
Datasheet PDF File C4666 PDF File

C4666
C4666


Overview
2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4666 Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 100 125 −55~125 Unit V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/volta...



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