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C4539

Toshiba
Part Number C4539
Manufacturer Toshiba
Description 2SC4539
Published Jun 10, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4539 Power Amplifier Applications Power Switching Applica...
Datasheet PDF File C4539 PDF File

C4539
C4539

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4539 Power Amplifier Applications Power Switching Applications 2SC4539 Unit: mm · Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 700 mA) · High speed switching time: tstg = 0.
3 µs (typ.
) · Small flat package · PC = 1.
0 to 2.
0 W (mounted on ceramic substrate) · Complementary to 2SA1743 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Collector power dissipation VCBO VCEO VEBO IC IB PC PC (Note) 50 30 6 1.
2 0.
3 500 1000 Junction temperature Storage temperature range Tj 150 Tstg ...


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