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C4213

Part Number	C4213
Manufacturer	Toshiba
Description	2SC4213
Published	Jun 9, 2015
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 2SC4213 For Muting and Switching Applications Uni...
Datasheet	C4213 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 2SC4213 For Muting and Switching Applications Unit: mm  High emitter-base voltage: VEBO = 25 V  High reverse hFE: Reverse hFE = 150 (typ.
) (VCE = −2 V, IC = −4 mA)  Low on resistance: RON = 1 Ω (typ.
) (IB = 5 mA)  High DC current gain: hFE = 200 to 1200  Small package Absolute Maximum Ratings (Ta  25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO 50 V VCEO 20 V VEBO 25 V IC 300 mA IB 60 mA PC (Note 1, 3) 200 mW PC (Note 2...

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