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C3670

Toshiba
Part Number C3670
Manufacturer Toshiba
Description 2SC3670
Published Jun 8, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3670 Strobe Flash Applications Medium Power Amplifier App...
Datasheet PDF File C3670 PDF File

C3670
C3670

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications 2SC3670 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.
5 A) : hFE (2) = 70 (min), 200 (typ.
) (VCE = 1 V, IC = 2 A) • Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 2 A, IB = 50 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg 3...


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