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C3669

Part Number	C3669
Manufacturer	Toshiba
Description	2SC3669
Published	Jun 8, 2015
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3669 Power Amplifier Applications Power Switching Applica...
Datasheet	C3669 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3669 Power Amplifier Applications Power Switching Applications 2SC3669 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.
0 μs (typ.
) • Complementary to 2SA1429 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 80 80 5 2 1 1000 150 −55 to 150 V V V A A mW °C °C JEDEC JEITA TOSHIBA ― ― 2-7D101A Note1: Using continuously under heav...

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