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C3668

Toshiba
Part Number C3668
Manufacturer Toshiba
Description 2SC3668
Published Jun 8, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3668 Power Amplifier Applications Power Switching Applica...
Datasheet PDF File C3668 PDF File

C3668
C3668

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3668 Power Amplifier Applications Power Switching Applications 2SC3668 Unit: mm • Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW • High-speed switching: tstg = 1.
0 μ (typ.
) • Complementary to 2SA1428.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.
5 A JEDEC ― Collector power dissipation Junction temperature Storage temperature range PC 1000 mW Tj 150 °C Tstg −55 to 150 °C JEITA...


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