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C3326

Part Number	C3326
Manufacturer	Toshiba
Description	2SC3326
Published	Jun 8, 2015
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications 2SC3326 Unit:...
Datasheet	C3326 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications 2SC3326 Unit: mm  AEC-Q101 Qualified (Note1).
 High emitter-base voltage: VEBO = 25 V  High reverse hFE: Reverse hFE = 150 (typ.
) (VCE = −2 V, IC = −4 mA)  Low on resistance: RON = 1 Ω (typ.
) (IB = 5 mA)  High DC current gain: hFE = 200 to 1200  Small package Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO 50 V ...

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