2SC3122 - Toshiba
Description
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3122
2SC3122
TV VHF RF Amplifier Applications
Unit: mm
· High gain: Gpe = 24dB (typ.
) (f = 200 MHz) · Low noise: NF = 2.
0dB (typ.
) (f = 200 MHz) · Excellent forward AGC characteristics
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
30 30 3 20 10 150 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.
012 g (typ.
)
Characteristics
Symbol
Test Condition
Min Typ.
Max Unit
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Reverse transfer capacitance Transition frequency Power gain Noise figure
AGC voltage
ICBO IEBO V (BR) CEO hFE Cre
fT Gpe NF
VAGC
VCB = 25 V, IE = 0 VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 2 mA
VCE = 12 V, VAGC = 1.
4 V, f = 200 MHz
VCC = 12 V, GR = 30dB, f = 200 MHz (Note)
¾ ¾ 30 60 ¾ 400 20 ¾
3.
6
¾ 100 nA
¾ 100 nA
¾¾
V
150 300
0.
3 0.
45 pF
650 ¾ MHz
24 28 dB
2.
0 3.
2 dB
4.
4 5.
1
V
Note: VAGC measured by test circuit shown in Figure 1 when power gain is reduced to 30dB compared that of VAGC at 1.
4 V.
1 2003-03-19
2SC3122
L1: RF Coil M-15 T (TOKO Inc.
) or equivalent L2: RF Coil M-25 T (TOKO Inc.
) or equivalent
Figure 1 200 MHz Gpe, NF Test Circuit Marking
2 2003-03-19
2SC3122
3 2003-03-19
2SC3122
4 2003-03-19
2SC3122
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA produc...
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