N-Channel MOSFET
Description
HFP2N70S
Dec 2009
HFP2N70S
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 5.0 Ω ID = 1.6 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC (Typ.) Extended Safe Operating Area Lower RDS(ON...
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