N-Channel MOSFET
Description
HFW9N50_HFI9N50
June 2005
HFW9N50 / HFI9N50
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 0.58 Ω ID = 9.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Ar...
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