N-Channel MOSFET
Description
HFW5N50S_HFI5N50S
June 2009
HFW5N50S / HFI5N50S
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 5.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operati...
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