Power-Transistor
Description
OptiMOSTM-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPD90N10S4L-06
Product Summary V DS R DS(on),max ID
100 V 6.
6 mW 90 A
PG-TO252-3-313
TAB
1 3
Type IPD90N10S4L-06
Package
Marking
PG-TO252-3-313 4N10L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=45A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value 90
69
360 250 70 +/-16 136 -55 .
.
.
+175 55/175/56
Unit A
mJ A V W °C
Rev.
1.
0
page 1
2011-11-30
IPD90N10S4L-06
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 1.
1 K/W - - 62 - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
100 -
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=90µA
1.
1 1.
6 2.
1
Zero gate voltage drain current
I DSS
V DS=100V, V GS=0V
- 0.
01 1 µA
V DS=100V, V GS=0V, T j=125°C2)
-
1 100
Gate-source leakage current Drain-source on-state resistance
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=4.
5V, I D=45A
V GS=10 V, I D=90 A
- - 100 nA - 6.
9 8.
1 mW - 5.
8 6.
6
Rev.
1.
0
page 2
2011-11-30
IPD90N10S4L-06
Parameter
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics2) Gate...
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