N-channel MOSFET
Description
Elektronische Bauelemente
2N7002K
0.
3A , 60V , RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), VGS@4.
5V, IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems,
Solid-State Relays Drivers：Relays, Displays, Lamps, Solenoids, Memories, etc.
ESD Protected 2KV HBM In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-23 Package Terminals: Solderable per MIL-STD-750,
Method 2026 Approx.
Weight: 0.
008 gram
MARKING
K72
SOT-23
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter
Min.
Max.
2.
80 3.
04 2.
10 2.
55 1.
20 1.
40 0.
89 1.
15 1.
78 2.
04 0.
30 0.
50
REF.
G H J K L
Millimeter
Min.
Max.
0.
09 0.
18 0.
45 0.
60 0.
08 0.
177
0.
6 REF.
0.
89 1.
02
Drain
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size 7’ inch
Gate
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current Pulsed Drain Current 1
ID IDM
Maximum Power Dissipation
TA=25°C TA=75°C
Thermal Resistance Junction-Ambient (PCB mounted) 2
Operating Junction and Storage Temperature
Notes: 1.
Maximum DC current limited by the package.
2.
Surface mounted on FR4 board, t < 5sec.
PD
RJA TJ, TSTG
Rating
60 ±20 300 2000 0.
35 0.
21
357 -55 ~ +150
Unit
V V mA mA
W
°C/W °C
http://www.
SeCoSGmbH.
com/
30-Mar-2011 Rev.
A
Any changes of specification will not be informed individually.
Page 1 of 4
Elektronische Bauelemente
2N7002K
0.
3A , 60V , RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage Gate-Threshold Voltage
Drain-...
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