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TC58NVG4S2FTA00

Part Number	TC58NVG4S2FTA00
Manufacturer	Toshiba
Description	16 GBIT (2G x 8 BIT) CMOS NAND E2PROM
Published	May 26, 2015
Detailed Description	TOSHIBA CONFIDENTIAL TC58NVG4S2FTA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8...
Datasheet	TC58NVG4S2FTA00 PDF File

Overview

TOSHIBA CONFIDENTIAL TC58NVG4S2FTA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG4S2F is a single 3.
3V 16 Gbit (18,621,267,968 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 576) bytes × 64 pages × 4148blocks.
The device has two 8768-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8768-byte increments.
The Erase operation is implemented in a single block unit (512 Kbytes + 36 Kbytes: 8768 bytes × 64 pages).
The TC58NVG4S2F is a serial-type memory device which utilizes the I/O pin...

Similar Datasheet

TC58NVG4S2FTA00 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM - Toshiba

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