Power-Transistor
Description
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02
Product Summary V DS R DS(on),max (SMD version) ID
40 V 2.
1 mΩ 90 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB90N04S4-02 IPI90N04S4-02 IPP90N04S4-02
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N0402 4N0402 4N0402
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value 90
90
360 475 90 ±20 150 -55 .
.
.
+175 55/175/56
Unit A
mJ A V W °C
Rev.
1.
1
page 1
2010-07-01
IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
-
- - 1.
0 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=95µA
I DSS
V DS=40V, V GS=0V
V DS=18V, V GS=0V, T j=85°C2)
I GSS R DS(on)
V GS=20V, V DS=0V V GS=10V, I D=90A
V GS=10V, I D=90A, SMD version
40 -
-V
2.
0 3.
0 4.
0
- 0.
04 1 µA
- 1 20
- - 100 nA - 2.
3 2.
5 mΩ
- 1.
9 2.
1
Rev.
1.
1
page 2
2010-07-01
Parameter
Dynamic characteristics2) Input capacitance Output ca...
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