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A1431

Toshiba Semiconductor
Part Number A1431
Manufacturer Toshiba Semiconductor
Description 2SA1431
Published May 10, 2015
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1431 Strobe Flash Applications Medium Power Amplifier App...
Datasheet PDF File A1431 PDF File

A1431
A1431

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications 2SA1431 Unit: mm • High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.
5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.
0 V (max) (IC = −4 A, IB = −0.
1 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg −35 −20 −8 −5 −8 −0.
5 1000...


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