2SA1430
Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1430
Strobe Flash Applications Medium Power Amplifier Applications
2SA1430
Unit: mm
High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
Low saturation voltage: VCE (sat) = −0.5 V (max) (IC...
Toshiba Semiconductor
A1430 PDF File
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