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C4497

Part Number	C4497
Manufacturer	Toshiba
Description	2SC4497
Published	Apr 3, 2015
Detailed Description	2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Un...
Datasheet	C4497 PDF File

Overview

2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Unit: mm • High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.
5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.
) • Complementary to 2SA1721 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 300 V 300 V 6 V 100 mA 20 mA 200 mW 150 °C −55 to 150 °C JEDEC JEITA TO-236MOD SC-59 Note:...

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