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TC58NVG4D2FTA00

Part Number	TC58NVG4D2FTA00
Manufacturer	Toshiba
Description	16 GBIT (4G x 8 BIT) CMOS NAND E2PROM
Published	Mar 14, 2015
Detailed Description	TOSHIBA CONFIDENTIAL TC58NVG4D2FTA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (4G × 8...
Datasheet	TC58NVG4D2FTA00 PDF File

Overview

TOSHIBA CONFIDENTIAL TC58NVG4D2FTA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (4G × 8 BIT) CMOS NAND E2PROM (Multi-Level-Cell) DESCRIPTION The TC58NVG4D2 is a single 3.
3 V 16 Gbit (18,367,119,360 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 448) bytes × 128 pages × 2076 blocks.
The device has two 8640-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8640-byte increments.
The Erase operation is implemented in a single block unit (1 Mbytes + 56 Kbytes: 8640 bytes × 128 pages).
The TC58NVG4D2 is a serial-type memory device which u...

Similar Datasheet

TC58NVG4D2FTA00 16 GBIT (4G x 8 BIT) CMOS NAND E2PROM - Toshiba

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