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TPH5200FNH

Toshiba
Part Number TPH5200FNH
Manufacturer Toshiba
Description Silicon N-channel MOSFET
Published Mar 7, 2015
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TPH5200FNH 1. Applications • High-Efficiency DC-DC Converters • Switching Volta...
Datasheet PDF File TPH5200FNH PDF File

TPH5200FNH
TPH5200FNH

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH5200FNH 1.
Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2.
Features (1) High-speed switching (2) Small gate charge: QSW = 8.
2 nC (typ.
) (3) Low drain-source on-resistance: RDS(ON) = 44 mΩ (typ.
) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1.
0 mA) 3.
Packaging and Internal Circuit TPH5200FNH SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2013-10 2019-10-18 Rev.
5.
0 TPH5200FNH 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless oth...


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