12A N-Channel MOSFET
Description
AOT12N65/AOTF12N65/AOB12N65
650V, 12A N-Channel MOSFET
General Description
The AOT12N65 & AOTF12N65 & AOB12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
750V@150℃ 12A < 0.
72Ω
TO-220
Top View TO-220F
TO-263 D2PAK
D
D
AOT12N65
S D G
Orderable Part Number
AOT12N65 AOTF12N65 AOTF12N65L AOB12N65L
AOTF12N65
GD S
Package Type
TO-220 Pb Free TO-220F Pb Free TO-220F Green
TO-263 Green
G AOB12N65
S
G
S
Form
Tube Tube Tube Tape & Reel
Minimum Order Quantity
1000 1000 1000 800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT(B)12N65
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS
dv/dt
12 7.
7
TC=25°C Power Dissipation B Derate above 25oC
PD
278 2.
2
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
AOT(B)12N65 65 0.
5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.
45
AOTF12N65 650 ±30 12* 7.
7* 48 5 375 750 30 5 50 0.
4
-55 to 150
300
AOTF12N65 65 -2.
5
AOTF12N65L
12* 7.
7*
40 0.
3
AOTF12N65L 65 -3.
1
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
Rev.
7.
0: December 2014
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Con...
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