2SD1061
Description
Ordering number:687G
PNP/NPN Epitaxial Planar Silicon Transistors
2SB825/2SD1061
50V/7A Switching Applications
Applications
· Universal high current switching as solenoid driving, high speed inverter and converter.
Features
· Low saturation voltage : VCE(sat)=(–)0.
4V max.
· Wide ASO
Package Dimensions
unit:mm 2010C
[2SB825/2SD1061]
( ) : 2SB825
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
ICBO IEBO hFE1 hFE2
fT
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)5A VCE=(–)5V, IC=(–)1A
* : The 2SB825/2SD1061 are classified by 1A hFE as follows :
70 Q 140 100 R 200 140 S 280
JEDEC : TO-220AB EIAJ : SC-46
1: Base 2 : Collector 3 : Emitter
Ratings (–)60 (–)50 (–)6 (–)7 (–)12 40 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
70* 30
10
max (–)0.
1 (–)0.
1 280*
Unit mA mA
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO product...
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