Surface Mount Schottky Power Rectifier
Description
MBRAF2H100T3G
Surface Mount Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact.
Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Features
• Low Profile Package for Space Constrained Applications • Rectangular Package for Automated Handling • Highly Stable Oxide Passivated Junction • 150°C Operating Junction Temperature • Guard−Ring for Stress Protection • These are Pb−Free and Halide−Free Devices
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max.
for 10 Seconds
• Cathode Polarity Band • Device Meets MSL 1 Requirements • ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
http://onsemi.
com
SCHOTTKY BARRIER RECTIFIER 2.
0 AMPERE 100 VOLTS
SMA−FL CASE 403AA
STYLE 6
MARKING DIAGRAM
AYWW RAAG
G
RAA = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBRAF2H100G SMA−FL 5000 / Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev.
0
1
Publication Order Number: MBRAF2H100/D
MBRAF2H100T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current
(TL = 140°C) Peak Repetitive Forwar...
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