MOS FIELD EFFECT TRANSISTOR
Description
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4057
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES • Low on-state resistance
RDS(on)1 = 15.
0 mΩ MAX.
(VGS = 10 V, ID = 15 A) • Low QGD: QGD = 2.
8 nC TYP.
• 4.
5 V drive available
ORDERING INFORMATION
PART NUMBER 2SK4057(1)-S27-AY Note 2SK4057-ZK-E1-AY Note 2SK4057-ZK-E2-AY Note
PACKAGE TO-251 (MP-3-b) TO-252 (MP-3ZK) TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.
)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±30 ±100
Total Power Dissipation (TC = 25°C)
PT1 19
Total Power Dissipation
PT2 1.
0
Channel Temperature
Tch 150
Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2
Tstg −55 to +150 IAS 17 EAS 28.
9
V V A A W W °C °C A mJ
Notes 1.
PW ≤ 10 μs, Duty Cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = 12 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
(TO-251) (TO-252)
The information in this document is subject to change without notice.
Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country.
Please check with an NEC Electronics sales representative for availability and additional information.
Document No.
D18034EJ2V0DS00 (2nd edition)
Date Published March 2007 NS CP(K)
Printed in Japan
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
2006
2SK4057
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
...
Similar Datasheet
