2SC4002
Description
Ordering number:EN2960
NPN Triple Diffused Planar Silicon Transistor
2SC4002
High-Voltage Driver Applications
Features
· High breakdown voltage.
· Adoption of MBIT process.
· Excellent hFE linearity.
Package Dimensions
unit:mm
2003B
[2SC4002]
5.
0 4.
0 4.
0
0.
6 2.
0 14.
0 5.
0
0.
45 0.
5
0.
45
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
ICBO IEBO hFE
VCB=300V, IE=0 VEB=4V, IC=0 VCE=10V, IC=50mA
Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage
fT VCE=30V, IC=10mA VCE(sat) IC=50mA, IB=5mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=50mA, IB=5mA
* : The 2SC4002 is classified by 50mA hFE as follows : 60 D 120 100 E
200
1.
3
1.
3
0.
44
1 : Emitter 2 : Collector 3 : Base SANYO : NP JEDEC : TO-92 EIAJ : SC-43
Ratings 400 400 5 200 400 600 150
–55 to +150
Unit V V V mA mA
mW ˚C ˚C
Ratings min typ
60* 70
max 0.
1 0.
1
200*
0.
6 1.
0
Unit
µA µA
MHz V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specificati...
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