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GT60N321

Toshiba Semiconductor
Part Number GT60N321
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 23, 2005
Detailed Description GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Th...
Datasheet PDF File GT60N321 PDF File

GT60N321
GT60N321

Overview
GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm · · · · FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.
25 µs (typ.
) (IC = 60 A) FRD : trr = 0.
8 µs (typ.
) (di/dt = −20 A/µs) Low saturation voltage: VCE (sat) = 2.
3 V (typ.
) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Emitter-Collector Forward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Screw Torque DC 1 ms DC 1 ms symbol VCES VGES IC ICP IECF IECFP PC Tj Tstg ¾ Rating 1000 ±25 60 120 15...


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