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GT50J301

Part Number	GT50J301
Manufacturer	Toshiba Semiconductor
Description	silicon N-channel IGBT
Published	Mar 23, 2005
Detailed Description	GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS MO...
Datasheet	GT50J301 PDF File

Overview

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third generation IGBT z Enhancement mode type z High speed : tf = 0.
30μs (Max.
) z Low saturation voltage : VCE (sat) = 2.
7V (Max.
) z FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage Gate−Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Screw Torque VCES VGES IC ICP IF IFM PC Tj Tstg ― 600 ±20 50 100 50 100 200 150 −55~150 0.
8 V V ...

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