Low Noise Active Bias Low Noise Amplifier
Description
MGA-684P8 Low Noise Active Bias Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-684P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA).
The LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.
25 m GaAs Enhancement-mode pHEMT process.
It is housed in a miniature 2.
0 x 2.
0 x 0.
75 mm3 8-pin Quad-Flat-Non-Lead (QFN) package.
It is designed for optimum use from 1.
5 GHz up to 4 GHz.
The compact footprint and low profile coupled with low noise, high gain and high linearity make the MGA-684P8 an ideal choice as a low noise amplifier for cellular infrastructure for GSM and CDMA.
For optimum performance at lower frequency from 450 MHz up to 1.
5 GHz, MGA-683P8 is recommended.
Both MGA-683P8 and MGA-684P8 share the same package and pinout configuration.
Pin Configuration and Package Marking
2.
0 x 2.
0 x 0.
75 mm3 8-lead QFN
[1] [8]
[2] 84X [7]
[3] [6] [4] [5]
[8] [7]
[6] [5]
[1] [2]
[3] [4]
Top View
Pin 1 – Vbias Pin 2 – RFinput Pin 3 – Not Used Pin 4 – Not Used
Bottom View
Pin 5 – Not Used Pin 6 – Not Used Pin 7 – RFoutput/Vdd Pin 8 – Not Used Centre tab - Ground
Note: Package marking provides orientation and identification “84” = Device Code, where X is the month code.
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model = 70 V (Class A) ESD Human Body Model = 500 V (Class 1B) Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control.
Features
Low noise Figure High linearity performance GaAs E-pHEMT Technology[1] Low cost small package size: 2.
0 x 2.
0 x 0.
75 mm3 Excellent uniformity in product specifications Tape-and-Reel packaging option available
Specifications
1.
9 GHz; 5 V, 35 mA 17.
6 dB Gain 0.
56 dB Noise Figure 21 dB Input Return Loss 32.
4 dBm Output IP3 22 dBm Output Power at 1dB gain compression
Applications
Low noise amplifier for cellular infrastructure for GSM TDS-CDMA, and CD...
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