STW12NK90Z
Description
STW12NK90Z
N-channel 900 V, 0.
72 Ω, 11 A TO-247 Zener-protected SuperMESH™ Power MOSFET
Features
Order code STW12NK90Z
VDSS 900 V
RDS(on) max
ID
Pw
< 0.
88 Ω 11 A 230 W
■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Very good manufacturing repeatability
Application
■ Switching applications
Description
This device is made using the SuperMESH™ Power MOSFET technology that is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
3 2 1 TO-247
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
Marking
STW12NK90Z
W12NK90Z
Package TO-247
Packaging Tube
April 2011
Doc ID 9615 Rev 6
1/13
www.
st.
com
13
Contents
Contents
STW12NK90Z
1
Electrical ratings .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
3
2
Electrical characteristics .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
4
2.
1 Electrical characteristics (curves) .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
6
3
Test circuits .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
8
4
Package mechanical data .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
9
5
Revision history .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
12
2/13
Doc ID 9615 Rev 6
STW12NK90Z
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
VDS VGS ID ID IDM(1) Ptot
Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain curr...
Similar Datasheet
