(FFM101G - FFM107G) 1.0A Surface Mount Fast Recovery Rectifiers
Description
Chip Silicon Rectifier
FFM101G THRU FFM107G
1.
0A Surface Mount Fast Recovery Rectifiers-50-1000V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• High current capability.
• Fast switching for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen-free parts, ex.
FFM101G-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, JEDEC DO-214AC / SMA • Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.
05 gram
Package outline SMA
0.
196(4.
9) 0.
180(4.
5)
0.
012(0.
3) Typ.
0.
106(2.
7) 0.
091(2.
3)
0.
032(0.
8) Typ.
0.
068(1.
7) 0.
060(1.
5)
0.
032 (0.
8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
Ambient temperature = 75oC
Forward surge current
Reverse current Thermal resistance Diode junction capacitance Storage temperature
8.
3ms single half sine-wave superimposed on rate load (JEDEC methode)
VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN.
TYP.
MAX.
UNIT IO 1.
0 A
IFSM 30 A
5.
0
IR
μA 100
RθJA
42 OC/W
CJ 15 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
FFM101G FFM102G FFM103G FFM104G
50 100 200 400
35 50 70 100 140 200 280 400
1.
30
150
FFM105G FFM106G FFM107G
600 800 1000
420 560 700
600 800 1000
250 500
Note 1.
Reverse recovery time test condition, IF=0.
5A, IR=1.
0A, IRR=0.
25A
Operating temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=1.
0A *5 Maxim...
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