30V P-Channel MOSFET
Description
AO3407
30V P-Channel Enhancement Mode MOSFET
VDS= -30V RDS(ON), Vgs@-10V, Ids@ 4.
1A < 64.
5m Ω RDS(ON), Vgs@-4.
5V, Ids@-3.
0A < 87m Ω
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D
SOT-23-3L
G
REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
65 2.
95 1.
50 1.
70 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M
S
Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Symbol Limit Unit
VDS VGS ID IDM TA = 25 C
o o
-30 ± 20
V
5.
3
-20 1.
4 1 -55 to 150 125
o
A
Maximum Power Dissipation Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted)
TA = 75 C
PD TJ, Tstg RθJA
W
o
C
C/W
1
JinYu
semiconductor
www.
htsemi.
com
Date:2011/05
AO3407
30V P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max.
Diode Forward Current Diode Forward Voltage
Symbol
Test Condition
Min.
Typ.
Miax.
Unit
BVDSS RDS(on) RDS(on)
VGS = 0V, ID = -250uA VGS = -10V, ID = -4.
1A VGS = -4.
5V, ID = -3A
-30 48.
0 64.
0 64.
5 87.
0
V mΩ
VGS(th) IDSS IGSS gfs
VDS =VGS, ID = -250uA VDS = -24V, VGS = 0V VGS = ± 20V, VDS = 0V VDS = -5V, ID = - 4 A
-1.
0
-1
-3.
0
-1 ± 100
V uA nA S
5.
5
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VDS = -15V , ID = -5.
3A VGS = -10V
9.
35 3.
43 1.
7 1...
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