N-Channel MOSFET
Description
Green Product
STT468A
Ver 1.
0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
40V
ID
2.
2A
R DS(ON) (m Ω) Max
250 @ VGS=10V 350 @ VGS=4.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Surface Mount Package.
ESD Protected.
D
G G S
STT SERIES SOT - 223
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a d
Limit 40 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 2.
2 1.
8 14
a
Units V V A A A W W °C
Maximum Power Dissipation
3 1.
9 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
42
°C/W
Details are subject to change without notice.
Oct,21,2013
1
www.
samhop.
com.
tw
STT468A
Ver 1.
0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min 40 1 ±10 Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=32V , VGS=0V
V uA uA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=1.
1A VGS=4.
5V , ID=0.
9A VDS=10V , ID=1.
1A
1
2 200 280 2.
6
3 250 350
V m ohm m ohm S pF pF pF
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
c
VDS=20V,VGS=0V f=1.
0MHz
41 18 9
VDD=20V ID=1A VGS=10V RGEN= 6 ohm VDS=20V,ID=1.
1A,VGS=10V VDS=20V,ID=1.
1A, VGS=10V
24 32 310 126 1.
5 0.
48 0.
62
ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage ...
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