N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
AP02N70EI
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ ESD Improved Capability ▼ Simple Drive Requirement
G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
700V 7Ω 1.
6A
S
Description
AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
G D S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 700 ±20 1.
6 1 6.
4 27.
8
2
Units V V A A A W mJ A ℃ ℃
Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
13 1.
6 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.
5 65 Units ℃/W ℃/W
Data & specifications subject to change without notice
1 200801121
Downloaded from Elcodis.
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AP02N70EI
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current Drain-Source Leakage Current (Tj=150 C)
o
o
Test Conditions VGS=0V, ID=1mA
3
Min.
700 2 -
Typ.
0.
65 17 1.
5 11 10 8 21 15 170 30 20
Max.
Units 7 4 10 100 ±10 30 300 V Ω V S uA uA uA nC nC nC ns ns ns ns pF pF pF
VGS=10V, ID=0.
8A VDS=VGS, ID=250uA VDS=10V, ID=0.
8A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±20V ID=0.
8A VDS=560V VGS=10V VDD=350V ID=0.
8A RG=4.
7Ω,VGS=10V RD=438Ω VGS=0V VDS=25V f=1.
0MHz
Gate-Source Leakage Total Gate Charg...
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