N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
AP03N70H/J-H
Pb Free Plating Product
Advanced Power Electronics Corp.
¡¿ ¡¿ ¡¿ ¡¿ Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement RoHS Compliant G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
700V 4.
4£[ 2.
5A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP03N70J) is available for lowprofile applications.
G D S
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25¢J ID@TC=100¢J IDM PD@TC=25¢J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 700 ±30 2.
5 1.
6 8 54.
3 0.
44
2
Units V V A A A W W/¢J mJ A ¢J ¢J
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
31 2.
5 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 2.
3 110 Units ¢J /W ¢J /W
Data & specifications subject to change without notice
200417062-1/4
AP03N70H/J-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
£GB VDSS/£G Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min.
700 2 -
Typ.
0.
6 2 12 3 4 8.
5 6 19 8 590 50 6 3.
4
Max.
Units 4.
4 4 10 100 ±100 20 950 5.
1 V V/¢J £[ V S uA uA nA nC nC nC ns ns ns ns pF pF pF £[
Breakdown Voltage Temperature Coefficient Reference to 25¢J , ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VGS=10V, ID=1.
6A VDS=VGS, ID=250uA VDS=10V, ID=1.
6A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=1A VDS=48...
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