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C5029

Part Number	C5029
Manufacturer	Toshiba Semiconductor
Description	2SC5029
Published	Sep 20, 2014
Detailed Description	2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5029 Power Amplifier Applications Power Switchin...
Datasheet	C5029 PDF File

Overview

2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5029 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm • • • • Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1 A, IB = 0.
05 A) High collector power dissipation: PC = 1.
3 W High-speed switching: tstg = 1.
0 μs (typ.
) Complementary to 2SA1892 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 3 0.
2 1.
3 150 −55 to 150 Unit V V V A A W °C °C JEDE...

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