Silicon N-Channel MOSFET
Description
MOSFETs Silicon N-Channel MOS (π-MOS)
TK10J80E
1.
Applications
• Switching Voltage Regulators
2.
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.
7 Ω (typ.
) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.
5 to 4.
0 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
TK10J80E
TO-3P(N)
1: Gate 2: Drain (Heatsink) 3: Source
Start of commercial production
2013-08
1
2014-02-28
Rev.
4.
0
TK10J80E
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Mounting torque
(Tc = 25)
(Note 1) (Note 1)
(Note 2)
(Note 1) (Note 1)
VDSS VGSS
ID IDP PD EAS IAR IDR IDRP Tch Tstg TOR
800 ±30 10 30 250 454 10 10 30 150 -55 to 150 0.
8
V A W mJ A
Nm
Note:
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics
Characteristics
Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: VDD = 90 V, Tch = 25 (initial), L = 8.
3 mH, RG = 25 Ω, IAR = 10 A
Symbol
Rth(ch-c) Rth(ch-a)
Max
Unit
0.
5
/W
50
/W
Note: This transistor is sensitive to electrostatic discharge and s...
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