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TK10A80E

Toshiba Semiconductor
Part Number TK10A80E
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 20, 2014
Detailed Description TK10A80E MOSFETs Silicon N-Channel MOS (π-MOS) TK10A80E 1. Applications • Switching Voltage Regulators 2. Features (1...
Datasheet PDF File TK10A80E PDF File

TK10A80E
TK10A80E

Overview
TK10A80E MOSFETs Silicon N-Channel MOS (π-MOS) TK10A80E 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.
7 Ω (typ.
) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) Enhancement mode: Vth = 2.
5 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-10 2014-03-04 Rev.
3.
0 TK10A80E 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain...


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