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TK11A55D

Toshiba Semiconductor
Part Number TK11A55D
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 19, 2014
Detailed Description TK11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK11A55D Switching Regulator Applications ...
Datasheet PDF File TK11A55D PDF File

TK11A55D
TK11A55D

Overview
TK11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK11A55D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.
52 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 6.
0 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 550 ±30 11 44 45 276 11 4.
5 150 −55 to 150 Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Drain power dissipation (Tc = 25°C) Single puls...


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