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SSM6G18NU

Toshiba Semiconductor
Part Number SSM6G18NU
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Diode
Published Sep 19, 2014
Detailed Description Composite Devices Silicon P-Channel MOS / Epitaxial Schottky Barrier SSM6G18NU SSM6G18NU 1. Applications • Power Manag...
Datasheet PDF File SSM6G18NU PDF File

SSM6G18NU
SSM6G18NU

Overview
Composite Devices Silicon P-Channel MOS / Epitaxial Schottky Barrier SSM6G18NU SSM6G18NU 1.
Applications • Power Management Switches 2.
Features (1) Combined a P-channel MOSFET and a Schottky barrier diode in one package.
2.
1.
MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 261 mΩ (max) (VGS = -1.
5 V) RDS(ON) = 185 mΩ (max) (VGS = -1.
8 V) RDS(ON) = 143 mΩ (max) (VGS = -2.
5 V) RDS(ON) = 112 mΩ (max) (VGS = -4.
5 V) 2.
2.
Diode Features (1) Low forward voltage: VF = 0.
48 V (typ.
) (@IF = 1000 mA) 3.
Packaging and Internal Circuit UDFN6 1.
Anode 2.
N.
C.
3.
Drain 4.
Source 5.
Gate 6.
Cathode ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial productio...


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