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SSM5G11TU

Toshiba Semiconductor
Part Number SSM5G11TU
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Diode
Published Sep 19, 2014
Detailed Description SSM5G11TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applic...
Datasheet PDF File SSM5G11TU PDF File

SSM5G11TU
SSM5G11TU

Overview
SSM5G11TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications • • • 4-V drive Combined a P-ch MOSFET and a Schottky barrier diode in one package.
Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel temperature Symbol VDSS VGSS ID IDP PD (Note 1) Tch Rating -30 ± 20 -1.
4 A -2.
8 500 150 mW °C Unit V V Schottky Barrier Diode (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current Junction temperature Symbol VRRM IF (AV) IFSM Tj Rat...


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