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SSM5G10TU

Toshiba Semiconductor
Part Number SSM5G10TU
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Diode
Published Sep 19, 2014
Detailed Description SSM5G10TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applic...
Datasheet PDF File SSM5G10TU PDF File

SSM5G10TU
SSM5G10TU

Overview
SSM5G10TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications • • • 1.
8-V drive Combines a P-channel MOSFET and a Schottky barrier diode in one package.
Low RDS(ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Drain power dissipation Channel temperature Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10 s Tch Rating −20 ±8 −1.
5 −3.
0 0.
5 W 0.
8 150 °C Unit V V A UFV JEDEC Schottky Barrier Diode (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current Junction tempera...


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